Enrico Di Russo received his PhD degree from the University of Rouen (France) in 2018. His research interests focused on atom probe tomography (APT) of wide bandgap semiconductors. In particular, he was awarded the “Favard Prize” of the French Microscopy Society for his pioneering studies on the photonic atom probe (PAP) development. Afterward, he worked as a postdoctoral researcher at CEA-LETI, developing a unique expertise to study optoelectronic devices combining APT with other microscopy techniques such as electron holography and cathodoluminescence. In 2020, he moved toward the University of Padua to develop innovative solutions in order to fabricate Ge-based alloys and 2D materials by using UV nanosecond laser. In 2021 he was awarded an “Seal of excellence @UniPD” research grant for the project “HyperGe”. The aim of this project was to fabricate relaxed GeSn-on-Ge films, with Sn concentrations exceeding 8 at./%. In 2022 he received a “PNRR Young Researchers - SOE” research grant for the project “SWIRGe”. During this project direct-bandgap GeSn alloys will be fabricated by using pulsed laser melting on the top of Ge-on-Si photodetectors, in order to obtain SWIR sensitivity.