Richard Daubriac is a semiconductor physics researcher. He received his PhD in Micro and Nano Systems in 2018 from the Institut National des Sciences Appliquées (INSA) in Toulouse, France. During his studies, he worked in the MPN team (Materials, Processes and Nanodevices) at the LAAS-CNRS laboratory. Between 2019 and 2020, he was a postdoctoral researcher at CEA-LETI in Grenoble, before returning to LAAS-CNRS in Toulouse for four years. His work focuses on the structural and electrical characterisation of innovative materials and fabrication processes for MOSFETs, photonic devices, and quantum devices. He has worked with various materials, including semiconductors (Si and Ge), their dopants (B, As, P, Te and Sb), metals (Cu and Ru), and topological insulators (BiSb and BiSbTe). Of all the existing fabrication techniques, he specialises in nanosecond laser annealing for the alloying and doping of semiconductors. In his MSCA-PF project (PORTAL), Dr Daubriac uses this technique to fabricate and dope GeSn, which has highly sought-after infrared photodetection properties. This research is also essential for understanding the laser annealing process and all the fine mechanisms involved in light–matter interaction and subsequent out-of-equilibrium phenomena.