Address book

Contacts

Staff Structures

PAOLO MAGNONE

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Position

Professore Associato

Address

STRADELLA SAN NICOLA, 3 - VICENZA

Telephone

0444998752

Notices

Office hours

  • Friday from 15:00 to 17:00
    at Studio docente
    Si consiglia di contattare anticipatamente il docente via e-mail

Teachings

Publications

Selected Publications:

- T. Younis, P. Mattavelli, P. Magnone, I. Toigo, M. Corradin, “Enhanced Level-Shifted Modulation for a Three-Phase Five-level Modified Modular Multilevel Converter (MMC)”, IEEE Journal of Emerging and Selected Topics in Power Electronics, DOI: 10.1109/JESTPE.2021.3093486, 2021.
- G. Liu, T. Caldognetto, P. Mattavelli, P. Magnone, “Suppression of Second-Order Harmonic Current for Droop-Controlled Distributed Energy Resource Converters in DC Microgrids”, Transactions on Industrial Electronics, vol 67, no. 1, pp. 358 – 368, 2020.
- A. Khodamoradi, G. Liu, P. Mattavelli, T. Caldognetto, P. Magnone, “Analysis of an On-Line Stability Monitoring Approach for DC Microgrid Power Converters”, IEEE Transactions on Power Electronics, vol 34, no. 5, pp. 4794 – 4806, 2019.
- G. Liu, T. Caldognetto, P. Mattavelli, P. Magnone, “Power-Based Droop Control in DC Microgrids Enabling Seamless Disconnection from Upstream Grids”, IEEE Transactions on Power Electronics, vol 34, no. 3, pp. 2039 – 2051, 2019.
- A. N. Tallarico, S. Stoffels, N. Posthuma, P. Magnone, D. Marcon, S. Decoutere, E. Sangiorgi, C. Fiegna, “PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms”, IEEE Transactions on Electron Devices, vol. 65, no.1, pp. 38-44, 2018.
- A. N. Tallarico, S. Stoffels, P. Magnone, N. Posthuma, E. Sangiorgi, S. Decoutere, C. Fiegna, “Investigation of the p-GaN Gate Breakdown in Forward-biased GaN-based Power HEMTs”, IEEE Electron Device Letters, vol. 38, no. 1, pp. 99-102, 2017.
- P. Magnone, M. Debucquoy, D. Giaffreda, N. Posthuma, C. Fiegna, “Understanding the Influence of Busbars in Large-Area IBC Solar Cells by Distributed SPICE Simulations”, IEEE Journal of Photovoltaics, vol. 5, no. 2, pp. 552-558, 2015.
- P. Magnone, F. Crupi, N. Wils, R. Jain, H. Tuinhout, P. Andricciola, G. Giusi, C. Fiegna, “Impact of Hot Carriers on nMOSFET variability in 45 nm and 65 nm CMOS Technologies”, IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2347-2353, 2011.
- P. Magnone, F. Crupi, A. Mercha, P. Andricciola, H. Tuinhout, R. J. P. Lander, “FinFET mismatch in subthreshold region: theory and experiments”, IEEE Transactions on Electron Devices, vol. 57, no. 11, pp. 2848-2856, 2010
- (Invited) P. Magnone, F. Crupi, G. Giusi, C. Pace, E. Simoen, C. Claeys, L. Pantisano, D. Maji, V. Ramgopal Rao, P. Srinivasan “1/f noise in drain and gate current of MOSFETs with high-k gate stacks”, IEEE Transactions on Device and Materials Reliability, vol. 9, no. 2, pp. 180-189, 2009.