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GAUDENZIO MENEGHESSO

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Position

Professore Ordinario

Structure

Dipartimento di Ingegneria dell'Informazione - DEI

Address

VIA G. GRADENIGO, 6/B - PADOVA

Telephone

0498277653

E-mail

gaudenzio.meneghesso@unipd.it

Gaudenzio Meneghesso (IEEE S’95–M’97–SM’07- F’13)
1992 Graduated in Electronic Engineering with full marks
1997 He obtained the title of PhD in Electronic and TLC Engineering.
1998 Researcher of the SSD K01X (now ING-INF/01) at the University of Padua
2002 Associate Professor SSD ING-INF/01 at the University of Padua
2011 Full Professor SSD ING-INF/01 at Univ. Padova
2013 IEEE Fellow class of 2013 with the citation "for contributions to the reliability physics of compound semiconductors devices"
2014 – 2018 Deputy Director of DEI
2018 – present Director of the Information Engineering department of the University of Padua


His research interests are:
a) Power devices on wide bandgap semiconductors (GaN, SiC)
b) Microwave and optoelectronics devices on III-V and III-N;
c) RF-MEMS switches for reconfigurable antenna arrays;
d) Electrostatic discharge (ESD) protection structures;
e) organic semiconductors devices;
f) photovoltaic solar cells based on various materials.

RESEARCH PROJECTS AND CONTRACTS
He is (has been) involved in several research Projects that have cumulated a total funding, for the department of information Engineering, of more that 6 Million Euro.

He is the Project Coordinator of a European project H2020 – InRel-NPower
(http://www.inrel-npower.eu/ ) H2020-NMBP-2016-2017, Grant Agreement number 720527.

He is/was the work package leader and the responsible for the University of Padova of several European projects:
- Local Responsible and WPleader of an European project, STREP, FP6, "HYPHEN", "Hybrid Substrates for Competitive High Frequency Electronics" - Project ID: 027455
- Local Responsible and WPleader of an European project STREP of FP7: ALINWON "AlGaN and InAlN based microwave components", Project ID: 242394
- Local Responsible and WPleader of an European project STREP of FP7 - Hiposwitch "GaN-based normally-off high power switching transistor for efficient power converters" Project ID: 287602
- Local Responsible and WPleader of an European project ENIAC JU "E2COGAN" - Energy Efficient Converters using GaN Power Devices - project no. 324280/2012
- Local Responsible and WPleader of an European project ECSEL "WINSiC4AP"

Within these activities, he published more than 800 technical papers (of which more than 100 Invited Papers and 10 best paper awards.
Bibliometric indexes (updated April 2017):
• Scopus: Documents: 504, Tot. Citations 6519, h-index: 40
• Google Scholar: Documents: 621, Tot. Citations 9000, h-index: 45

He is reviewer of several international journals.

He served several years for the IEEE-International Electron Device Meeting (IEDM): he was in the Quantum Electronics and Compound Semiconductors sub-committee as a member in 2003, and 2017 as chair in 2004 and 2005 while in 2006 and 2007 he has been in the Executive Committee as European Arrangements Chair.

He is serving since 2005 in the TPC of the IEEE International Reliability Physics (IRPS) Symposium (being TPC Chair of the Compound Semiconductor from 2008 to 2010) and since 2009 he is with the management committee.
In 2018 He has been Technical Program Committee Chair of IEEE IRPS 2018.

Currently he is Associate Editor of the IEEE Transaction on Electron Devices for the compound semiconductor devices area since 2015.

He has been nominated to IEEE Fellow class 2013, with the following citation: “for contributions to the reliability physics of compound semiconductors devices”.

More details can be found here: http://www.meneghesso.it

Notices

Office hours

  • Monday from 14:00 to 16:00
    at DIPARTIMENTO DI INGEGNERIA DELL'INFORMAZIONE, 1 Piano, stanza 117.
    Prendere appuntamento via e-mail: gaudenzio.meneghesso@unipd.it

Teachings

Publications

Top 10 most cited Pubblications (updated August 2023)

H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, ….. G. Meneghesso, …., Y. Zhang, “The 2018 GaN power electronics roadmap”, TOPICAL REVIEW, J. Phys. D: Appl. Phys. 51 (2018) 163001, Title of contribution: “Reliability of GaN power devices: normally-on and normally-off”, pp.18-20, ISSN: 00223727, doi: 10.1088/1361-6463/aaaf9d Cited 747 times.

Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M., Zanoni, E., Reliability of GaN high-electron-mobility transistors: State of the art and perspectives, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4497830, pp. 332-343. DOI: 10.1109/TDMR.2008.923743 Cited 536 times.

Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., Zanoni, E., Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies, (2013) Journal of Applied Physics, 114 (7), 071101, DOI: 10.1063/1.4816434, Cited 353 times.

Bisi, D., Meneghini, M., De Santi, C., Chini, A., Dammann, M., Bruckner, P., Mikulla, M., Meneghesso, G., Zanoni, E. Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements (2013) IEEE Transactions on Electron Devices, 60 (10), art. no. 6605590, pp. 3166-3175. DOI: 10.1109/TED.2013.2279021, Cited 303 times.

Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U.K., Canali, C., Zanoni, E., Surface-related drain current dispersion effects in AlGaN-GaN HEMTs, (2004) IEEE Transactions on Electron Devices, 51 (10), pp. 1554-1561. DOI: 10.1109/TED.2004.835025, Cited 280 times.

Meneghini, M., Trevisanello, L.-R., Meneghesso, G., Zanoni, E. A review on the reliability of GaN-based LEDs, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4539822, pp. 323-331. DOI: 10.1109/TDMR.2008.921527, Cited 250 times.

Meneghini, M., Tazzoli, A., Mura, G., Meneghesso, G., Zanoni, E., A review on the physical mechanisms that limit the reliability of GaN-based LEDs, (2010) IEEE Transactions on Electron Devices, 57 (1), art. no. 5332356, pp. 108-118. DOI: 10.1109/TED.2009.2033649, Cited 239 times.

Trevisanello, L., Meneghini, M., Mura, G., Vanzi, M., Pavesi, M., Meneghesso, G., Zanoni, E., Accelerated life test of high brightness light emitting diodes, (2008) IEEE Transactions on Device and Materials Reliability, 8 (2), art. no. 4472171, pp. 304-311. DOI: 10.1109/TDMR.2008.919596, Cited 154 times.

Meneghesso, G., Rampazzo, F., Kordoš, P., Verzellesi, G., Zanoni, E., Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs, (2006) IEEE Transactions on Electron Devices, 53 (12), pp. 2932-2940. DOI: 10.1109/TED.2006.885681, Cited 153 times.

Faqir, M., Verzellesi, G., Meneghesso, G., Zanoni, E., Fantini, F., Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs, (2008) IEEE Transactions on Electron Devices, 55 (7), pp. 1592-1602. DOI: 10.1109/TED.2008.924437, Cited 120 times.

Research Area

a) Design, testing and modeling of ESD protection structures for CMOS and SMART POWER integrated circuits
A characterization, testing and development study was conducted of protection structures created in CMOS and SMART POWER technology (BCD, and BCD SOI, Silicon On Insulator) analyzed through electrical measurements, electroluminescence measurements (emission microscopy) and electrosimulations. -two-dimensional thermal drift-diffusion (DESSIS-ISE

b) Electrical characterization, modeling and reliability evaluation of microwave devices on III-V semiconductors such as GaAs and InP
A systematic study of the characteristics and reliability of field effect devices (MESFETs and HEMTs) and bipolar devices (HBT) grown on GaAs and/or InP was conducted. In particular, the following topics were addressed: (i) Characterization of the breakdown of devices and measurement of the ionization coefficient of electrons and holes; (ii) Improvement of breakdown in InP devices through the use of a composite (InGaAs/InP) and quantized channel (channel thickness less than 10nm); (iii) Study of failure modes and mechanisms in devices subjected to accelerated life tests;

c) Electrical characterization, modeling and reliability of electronic and optoelectronic devices on wide energy gap semiconductors
Optoelectronic devices (LEDs) and microwave power devices (MESFETs and HEMTs) are studied in depth on Silicon Carbide (SiC) and Gallium Nitride (GaN). The instabilities present in the electrical characteristics (collapse and kink effect in the I-V curves, current transients, photocurrent, etc.) attributed to trap states were characterized. Finally, several electrical stress tests were conducted aimed at identifying failure modes and mechanisms in GaN HEMTs for the identification of technological solutions for the development of robust and reliable devices.

d) Electrical characterization, modeling and reliability of RF-MEMS switches for reconfigurable antennas.
A characterization, reliability and fault analysis modeling study of switches made in MEMS (Micro Electro Mechanical Systems) technology for radio frequency (RF) applications was conducted. The main objective of this research activity was (i) to analyze the operating mechanisms of these devices from an electro-mechanical point of view, (ii) to identify the correct characterization methodology, (iii) to identify the failure mechanisms by accelerated aging tests and finally (iv) measure their behavior in particularly hostile environments such as space and mechanical shock

e) Development of low-cost, low-power, large-area organic electronics.
Research efforts have been dedicated to studying the most important factors that limit the performance and reliability of state-of-the-art organic semiconductor devices for electronic and optoelectronic applications (organic thin-film transistors, organic light-emitting diodes, organic solar cells ). Even though these devices have different structures, they present a series of common critical aspects that must be studied with the aim of improving performance, stability and reliability.