Gaudenzio Meneghesso (IEEE S’95–M’97–SM’07- F’13)
He graduated in Electronics Engineering at the University of Padova in 1992 working on the failure mechanism induced by hot-electrons in MESFETs and HEMTs. In 1997 he received the Ph.D. degree in Electrical and Telecommunication Engineering from the University of Padova working on hot-electron characterization, effects and reliability of GaAs-based and InP-based HEMT's and pseudomorphic HEMT's. Since 2011 is with University of Padova as Full Professor.

His research interests are:
a) Power devices on wide bandgap semiconductors (GaN, SiC)
b) Microwave and optoelectronics devices on III-V and III-N;
c) RF-MEMS switches for reconfigurable antenna arrays;
d) Electrostatic discharge (ESD) protection structures;
e) organic semiconductors devices;
f) photovoltaic solar cells based on various materials.

RESEARCH PROJECTS AND CONTRACTS
He is (has been) involved in several research Projects that have cumulated a total funding, for the department of information Engineering, of more that 6 Million Euro.

He is the Project Coordinator of a European project H2020 – InRel-NPower
(http://www.inrel-npower.eu/ ) H2020-NMBP-2016-2017, Grant Agreement number 720527.

He is/was the work package leader and the responsible for the University of Padova of several European projects:
- Local Responsible and WPleader of an European project, STREP, FP6, "HYPHEN", "Hybrid Substrates for Competitive High Frequency Electronics" - Project ID: 027455
- Local Responsible and WPleader of an European project STREP of FP7: ALINWON "AlGaN and InAlN based microwave components", Project ID: 242394
- Local Responsible and WPleader of an European project STREP of FP7 - Hiposwitch "GaN-based normally-off high power switching transistor for efficient power converters" Project ID: 287602
- Local Responsible and WPleader of an European project ENIAC JU "E2COGAN" - Energy Efficient Converters using GaN Power Devices - project no. 324280/2012
- Local Responsible and WPleader of an European project ECSEL "WINSiC4AP"

Within these activities, he published more than 800 technical papers (of which more than 100 Invited Papers and 10 best paper awards.
Bibliometric indexes (updated April 2017):
• Scopus: Documents: 504, Tot. Citations 6519, h-index: 40
• Google Scholar: Documents: 621, Tot. Citations 9000, h-index: 45

He is reviewer of several international journals.

He served several years for the IEEE-International Electron Device Meeting (IEDM): he was in the Quantum Electronics and Compound Semiconductors sub-committee as a member in 2003, and 2017 as chair in 2004 and 2005 while in 2006 and 2007 he has been in the Executive Committee as European Arrangements Chair.

He is serving since 2005 in the TPC of the IEEE International Reliability Physics (IRPS) Symposium (being TPC Chair of the Compound Semiconductor from 2008 to 2010) and since 2009 he is with the management committee.
In 2018 He has been Technical Program Committee Chair of IEEE IRPS 2018.

Currently he is Associate Editor of the IEEE Transaction on Electron Devices for the compound semiconductor devices area since 2015.

He has been nominated to IEEE Fellow class 2013, with the following citation: “for contributions to the reliability physics of compound semiconductors devices”.

More details can be found here: http://www.meneghesso.it

Notices